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ABSTRACT
ISSN: 0975-4024
| Title |
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Design of Broadband Low Noise Amplifier Based on HEMT Transistors in the X-Band |
| Authors |
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Mohammed Lahsaini, Lahbib Zenkouar, Seddik Bri |
| Keywords |
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LNA, Adaptation, T and PI Circuits, Filters, Stability, Noise, Gain |
| Issue Date |
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Feb-Mar 2013 |
| Abstract |
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In this paper, we have modeled a low noise amplifier LNA based on HEMT transistors of Alpha Industries®, adapted by band pass filters in the X-band. A detailed study of performance optimizations for stability and noise of the different adaptation circuits was established. This amplifier is two-stage circuit. It is unconditionally stable in the band [8-12] GHz with a gain greater than 22.48 dB, a noise figure less than 1.1 dB and reflection coefficients at the input and output (S11, S22) less than -20 dB and - 40 dB respectively. The amplifier designed can be integrated in radar systems, amateur radio and civil and military radiolocation systems. |
| Page(s) |
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468-476 |
| ISSN |
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0975-4024 |
| Source |
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Vol. 5, No.1 |
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