International Journal of Engineering and Technology

A technique for determination of the delay times C and B, forward transit time F and fitting parameter m of heterojunction bipolar transistors HBT is presented. The procedure is accurate than conventional methods because the new model based on the magnitude of common-base current gain α() is linear in the all-frequencies range. By utilizing the Z parameters of InGaP/GaAs HBT, excellent agreement is observed between measured αmes() and modeled α() in the frequency range 0-50 GHz.